DIODE GEN PURP 100V 6A D5B 1N6077US
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Description:
DIODE GEN PURP 100V 6A D5B
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
Rapid recovery=< 500ns,> 200mA(Io)
DataSheet
1N6077US(Diode rectifier)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13479,Price reference "real-time change" China/Hongkong。 1N6077US package/specs, Download 1N6077US、Datasheet。